NTE Electronics Inc. provee la serie de reemplazos de semiconductores mas amplia del mundo y otros componentes, suministros y herramientas para electrónica
NTE Electronics Inc.
PNP Darlington transistor for general purpose amplification and low speed switching. IC: 10 A, PTOT: 65 W, VCEO: 100 V, VCBO: 100 V, VEBO: 5 V. Original
High voltage NPN transistor. IC: 500 mA, PD: 625 mW, VCEO: 300 V, VCBO: 300 V, VEBO: 6 V, fT: 50 MHz, TO-92. Original
High voltage PNP transistor. IC: 500 mA, PD: 625 mW, VCEO: 300 V, VCBO: 300 V, VEBO: 5 V, fT: 50 MHz, TO-92. Original
Transistor MOSFET de potencia, canal N, modo de enriquecimiento, alta velocidad tON 45 ns y tOFF 325 ns, VDS 900 V, ID 14 A, RDS 0.63 Ω, PW 275 W, diodo damper. Original
Transistor NPN de alto voltaje para la amplificación de audio y barrido vertical en video. IC: 1 A, PTOT: 900 mW, VCEO: 160 V, VCBO: 160 V, VEBO: 6 V, fT: 100 MHz, Giant TO-92 . Original
Transistor PNP de alto voltaje para la amplificación de audio y barrido vertical en video. IC: 1 A, PTOT: 900 mW, VCEO: 160 V, VCBO: 160 V, VEBO: 6 V, fT: 50 MHz, Giant TO-92 . Original
High power NPN transistor for audio amplification. IC: 12 A, PD: 100 W, VCEO: 140 V, VCBO: 160 V, VEBO: 6 V, fT: 15 MHz, TO-3P package. Original
High power PNP transistor for audio amplification. IC: 12 A, PD: 100 W, VCEO: 140 V, VCBO: 160 V, VEBO: 6 V, fT: 15 MHz, TO-3P package. Original
Medium power NPN transitor, for audio amplification and driver. IC: 3 A, PTOT: 12.5 W, VCEO: 30 V, VCBO: 60 V, VEBO: 5 V, fT: 100 MHz. TO-126 package. Original
Medium power PNP transitor, for audio amplification and driver. IC: 3 A, PTOT: 12.5 W, VCEO: 30 V, VCBO: 60 V, VEBO: 5 V, fT: 100 MHz. TO-126 package. Original
General purpose PNP transistor. IC: 10 A, PTOT: 50 W, VCEO: 80 V, VEBO: 5 V. Original
High voltage NPN transistor for audio amplification. IC: 1 A, PTOT: 900 mW, VCEO: 100 V, VCBO: 120 V, VEBO: 5 V, fT: 140 MHz, Giant TO-92. Original
High voltage PNP transistor for audio amplification. IC: 1 A, PTOT: 900 mW, VCEO: 100 V, VCBO: 120 V, VEBO: 5 V, fT: 140 MHz, Giant TO-92. Original
High power NPN transistor for amplification or switching. IC: 25 A, PD: 125 W, VCEO: 100 V, VCBO: 100 V, VEBO: 5 V, fT: 3 MHz, TO-3PN package. Original
Transistor PNP de banda ancha, fT: 2.3 GHz, IC: 50 mA, PD: 225 mW, VCEO: 25 V, VCBO: 30 V, VEBO: 3 V, encapsulado TO-72. Original.
Transistor NPN de alto voltaje para la amplificación de video. IC: 100 mA, PTOT: 900 mW, VCEO: 300 V, VCBO: 300 V, VEBO: 6 V, fT: 50 MHz, Giant TO-92. Original
High voltage diode rectifier, 15 kV peak, 10.5 kV RMS, 550 mA, 50 A peak, low leakage current, low forward voltage drop. Original.
Diodo ultra rápido de pequeña señal, tiempo de recuperación 4 ns, 300 mA, 75 V. Original